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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES
Low Forward Voltage : VF(2)=0.23V (Typ.) Small Package : USC.
CATHODE MARK
B 1
KDR367
SCHOTTKY BARRIER TYPE DIODE
G
K
E
A
H
2 D
J C I
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range pad dimension of 4 4mm.
)
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 15 10 200 100 1 200* 125 -55 125 UNIT V V mA mA A mW
1. ANODE 2. CATHODE
M M DIM A B C D E F G H I J K L M
MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6
USC
* : Mounted on a glass epoxy circuit board of 20 20mm,
Marking
Type Name
US
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance IR CT
)
TEST CONDITION IF=1mA IF=5mA IF=100mA VR=10V VR=0V, f=1MHz MIN. TYP. 0.18 0.23 0.35 20 MAX. 0.30 0.50 20 40 A pF V UNIT
SYMBOL
2003. 2. 25
Revision No : 2
F
L
1/2
KDR367
I F - VF
100m FORWARD CURRENT I F (A) REVERSE CURRENT I R (A) 1m
I R - VR
Ta=100 C
100 10
Ta=75 C Ta=50 C Ta=25 C
10m
Ta = Ta 100 =7 C Ta =5 Ta 50 C C =2 5 C Ta =0 Ta C =-2 5C
1m
1 100n 10n
Ta=0 C Ta=-25 C
100
10 0 0.1 0.2 0.3 0.4 0.5
0
2
4
6
8
10
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
C T - VR
40 POWER DISSIPATION P (mW)
f=1MHz Ta=25 C
P - Ta
240 200 160 120 80 40 0
Mounted on a glass epoxy circuit board of 20 20mm, pad dimension 4 4mm.
CAPACITANCE CT (pF)
30
20
10
0 10m
30m
0.1
0.3
1
3
10
20
50
25
50
75
100
125
150
REVERSE VOLTAGE V R (R)
AMBIENT TEMPERATURE Ta ( C)
2003. 2. 25
Revision No : 2
2/2

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